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  inchange semiconductor isc product specification isc silicon darlington npn power transistor BU323 description collector-emitter sustaining voltage- : v ceo(sus) = 350v(min.) high reliability applications automotive ignition switching regulator motor control applications absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 350 v v ebo emitter-base voltage 8 v i c collector current- continuous 10 a i cm collector current-peak 16 a i b b base current 3 a p c collector power dissipation @t c =25 175 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.0 /w isc website www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/
inchange semiconductor isc product specification isc silicon darlington npn power transistor BU323 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0; l= 10mh 350 v v ce (sat)-1 collector-emitter saturation voltage i c = 3a; i b = 60ma b 1.5 v v ce (sat)-2 collector-emitter saturation voltage i c = 6 a; i b = 120ma 1.7 v v ce (sat)-3 collector-emitter saturation voltage i c = 10 a; i b = 300ma b 2.7 v v be (sat)-1 base-emitter saturation voltage i c = 6 a; i b = 120ma 2.2 v v be (sat)-2 base-emitter saturation voltage i c = 10 a; i b = 300ma b 3.0 v v be (on) base-emitter on voltage i c = 10a ; v ce = 6v 2.5 v i cer collector cutoff current v cer = ratedv cer ;r be = 100 1.0 ma i cbo collector cutoff current v cb = ratedv cbo ; i e = 0 1.0 ma i ebo emitter cutoff current v eb = 6v; i c = 0 40 ma h fe-1 dc current gain i c = 3a; v ce = 6v 300 h fe-2 dc current gain i c = 6a; v ce = 6v 150 2000 h fe-3 dc current gain i c = 10a; v ce = 6v 50 v ecf c-e diode forward voltage i f = 10a 3.5 v c ob output capacitance i e = 0; v cb = 10v; f= 100khz 165 pf switching times t s storage time 15 s t f fall time v cc = 12v; i c = 6a, i b1 = -i b2 = 0.3a 15 s isc website www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/


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